Abstract
Lasing in orange spectral range(599−605 nm)in(AlxGa1−x)0.5In0.5P−GaAs laser diodes grown by MOVPE on GaAs substrates(211) and (322) was demonstrated. The active region consisted of 4 layers of InxGa1−xP vertically coupled quantum dots. Carrier leakage from the active area was suppressed by using barriers formed with 4 quantum-sized layers of InGaAlP with high Ga content. The maximum optical power in the pulsed regime was limited by catastrophic optical mirror degradation and reached 800 mW. Lower threshold current density, higher differential efficiency, and lower internal losses were demonstrated by lasers processed from epitaxial structures grown on(322)A substrates in comparison to those grown on(211)A. This fact is due to the higher energy barrier for electrons in the first case.
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