1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Abstract

Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 μm laser applications is discussed. Long-stripe edge-emitting lasers demonstrate low threshold current density (<100 A/cm 2), high differential efficiency (>50%) and low internal loss (∼1–2 cm −1). Maximum output continuous-wave power for broad-area lasers is as high as 2.7 W. Narrow stripe (7 μm) lasers demonstrate single transverse mode operation with the maximum kink-free power of 110 mW. 1.3 μm vertical cavity surface emitting lasers were successfully fabricated from the structures with three QD planes inserted into the optical microcavity with AlO–GaAs Bragg reflectors. The output power is 220 mW at a drive current of 2.4 mA under pulsed mode for the device with the 8×8 μm oxidized aperture.