Abstract
In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by <TEX>$\alpha$</TEX>-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8<TEX>${\times}$</TEX>10<TEX>$^{-2}$</TEX> <TEX>$\Omega$</TEX>-cm(Zn:Al-Zn:Al), 3<TEX>${\times}$</TEX>10<TEX>$^{-1}$</TEX> <TEX>$\Omega$</TEX>-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.
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