Abstract
The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by <TEX>${\alpha}$</TEX>-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6<TEX>$^{\circ}$</TEX> on substrate temperature R.T. at O<TEX>$_2$</TEX> gas flo rate 0.5.
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