Abstract
AbstractThe electrothermal breakdown in high-voltage (1430 V) 4 H -SiC p ^+– n _0– n ^+ diodes with an n _0-base thickness of 7.5 μm, a donor concentration of 8.0 × 10^15 cm^–3, and 4.9 × 10^–4 cm^2 in area are studied. The stability of the diodes to avalanche breakdown is characterized by the maximum energy of a single avalanche current pulse that can be scattered by a diode until its catastrophic destruction. At a pulse duration of ~1 μs, the energy maximum is 1.4 mJ (2.9 J/cm^2). It is shown that diode destruction is caused by local overheating of the diode structure to a temperature of ~1600 K at which the intrinsic carrier concentration becomes higher than the doping donor concentrations in the blocking n _0-type base.
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