モード変換型マイクロ波プラズマＭＯＣＶＤ法による（１１１）配向ＺｒＯ２膜の低温堆積

Abstract

ZrO2 films were deposited on 12×17×0.5mm Si(100) single-crystal substrates or 9×18×0.5mm glass substrates using plasma-enhanced metal organic chemical vapor deposition (PE-MOCVD) with Zr (DPM) and oxygen as reactants. A mode converter was used to generate the plasma. The mode converter changes the microwave mode from TE10 (rectangular) to TM01 (circular), rising plasma density. We anticipated that ZrO2 film would be deposited at a lower temperature. The film obtained at 500°C was polycrystalline, but a predominantly (111)-orientated film was obtained at 300°C. Similar results were obtained on Si and glass substrates. No impurity such as hydrocarbon or carbon was detected in films. ZrO2 films had a tetragonal phase with lattice parameters of a=b=0.507nm and c=0.518nm. ZrO2 films deposited at 300°C at different microwave powers exhibited the same X-ray diffraction patterns. Film orientation was independent of microwave power. Film deposited for one hour at 300°C was 90nm thick with 30nm roughness and a refractive index of 2.10. Film growth activation energy was 14.5kJ/mol. We concluded that plasma generated by converting microwave to TM01 mode deposited preferred (111)-oriented ZrO2 film at a low temperature of 300°C.