Ｓｉ（１１１）面におけるＲｕシリサイドの形成と成長過程

Abstract

Formation process of nanoscale ruthenium silicide islands on a Si(111) surfaces was studied with scanning tunneling microscopy for the first time. The ruthenium silicide islands were formed and grown on the only disorder-region, and small island grew up in three dimensions by incorporation of clusters including Ru exist on disorder-region and silicon atoms during thermal annealing. As the sizes of islands approaches 400 nm2 or more, the growth in two dimensional in a plane was limited, and it grew up in the direction of height. We will discuss about the formation process of ruthenium silicide on a Si(111) surface.