Abstract
Transparent ZnO/Ag/ZnO tri-layered films were deposited on a glass substrate using radio frequency and direct current magnetron sputtering. The thicknesses of the ZnO and Ag films were maintained at 30 and 10 nm, respectively, to consider the effects of electron irradiation on the optoelectrical properties of the films. XRD spectra revealed that post-deposition electron irradiated films exhibited characteristic peaks of ZnO (002) and Ag (111), respectively. The observed grain sizes of ZnO (002) and Ag (111) increased to 7.1 and 8.4 nm, respectively, under an irradiation condition of 900 eV, and the surface roughness of the electron irradiated films at 900 eV was reduced to 1.29 nm. The as-deposited films showed a figure of merit, indicating the optoelectrical performance of the films, of 4.1×10SUP-3/SUP ΩSUP-1/SUP, whereas the films electron irradiated at 900 eV showed a higher figure of merit of 1.1×10SUP-2/SUP ΩSUP-1/SUP.
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