Abstract
We have considered the influence of electron irradiation on the optical and electrical properties of <TEX>$SnO_2$</TEX> thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of <TEX>$277{\Omega}/{\square}$</TEX> and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of <TEX>$SnO_2$</TEX> thin film in this study.
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