Abstract
A one-step route was developed to fabricate <TEX>$Cu(In,Ga)Se_2$</TEX> (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary <TEX>$CuIn_{0.75}Ga_{0.25}Se_2$</TEX> target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at <TEX>$300^{\circ}C$</TEX> and <TEX>$400^{\circ}C$</TEX> revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at <TEX>$300^{\circ}C$</TEX> were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
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