플라즈마 진단에 의한 PECVD SiO2증착의 불균일성 원인 연구

Abstract

The cause of the thickness non-uniformity in the large area deposition of films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the films, it was conformed that the non-uniform deposition of films was related with the spatial distribution of the oxygen radical density and electron temperature.