Селективный эпитаксиальный рост III-N-структур с использованием ионной нанолитографии

Abstract

AbstractThe selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si_3N_4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si_3N_4 mask on the character of selective epitaxy is studied.