Abstract
본 논문은 비정질 규소막 성장의 공정 조건이 저장 전극의 표면에 HSG-Si를 형성할 때 미치는 영향을 조사하였다. 그 결과 비정질 규소막의 인 농도가 <TEX>$5.5{\pm}0.1E19atoms/cm^3$</TEX> 이상이면 HSG-Si가 제대로 형성되지 않는 인 농도 의존성을 나타내었다. 또한 HSG 두께가 <TEX>$500{\AA}$</TEX> 이상에서는 전극과 전극을 단락시키는 비트 불량을 유발하기 때문에 비정질 규소막의 인농도는 <TEX>$4.5E19atoms/cm^3$</TEX>, HSG 임계 두께는 <TEX>$450{\AA}$</TEX>이 최적 조건임을 확인하였다. In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than <TEX>$5.5{\pm}0.1</TEX><TEX>E19atoms/cm^3$</TEX>, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are <TEX>$4.5E19atoms/cm^3$</TEX> and <TEX>$450{\AA}$</TEX>, respectively, because of the HSG thickness over the <TEX>$500{\AA}$</TEX> create to bit failure according to a short of the electrodes and the electrode.
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