Abstract
The results of study of bias voltage Ub and substrate temperature Ts influence on the texture of FeCo films with the thickness of 180 nm deposited on Si/SiO2 substrates by DC magnetron sputtering are presented. It is shown that the change of Ub from -250 V to ~ 80 V leads to the growth of films with (110) texture. Further change of Ub from 80 V to 250 V causes the growth of films having (200) texture. Films deposited at Ub = 0 and Ts = 60º – 300º C have (200) texture. Further increase of Ts results in the change of film texture to (110).
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