Получение текстурированных пленок FeCo(110) и FeCo(200) магнетронным распылением на постоянном токе

Abstract

The results of study of bias voltage Ub and substrate temperature Ts influence on the texture of FeCo films with the thickness of 180 nm deposited on Si/SiO2 substrates by DC magnetron sputtering are presented. It is shown that the change of Ub from -250 V to ~ 80 V leads to the growth of films with (110) texture. Further change of Ub from 80 V to 250 V causes the growth of films having (200) texture. Films deposited at Ub = 0 and Ts = 60º – 300º C have (200) texture. Further increase of Ts results in the change of film texture to (110).