Аномальное поведение боковой C-V-характеристики МНОП-транзистора со встроенным локальным зарядом в нитридном слое

Abstract

C-V dependence of lateral source-base transition of metal-nitride-oxide-semiconductor field effect transistor with localized nitride trapped charge is simulated. Localizing the charge induce anomalous jumping or recession of the capacitance at defined applied voltage. The change of capacitance is connected with redistribution of carriers at semiconductor surface induced by charge trapping. The anomalous behaviour of the capacitance can be used at detecting the localized charge trapped in the dielectric layer of field effect transistors.