Abstract
PbTe-base materials such as PbEuTe and PbSnTe are promising for lasers and detectors in the 3-30 μm region, and high-quality PbTe growth is a key issue to integrate these devices on GaAs substrates. Due to a large lattice mismatch, however, PbTe films on GaAs substrates are apt to contain twins and misorientations. This paper describes that single domain PbTe growth is realized by using a buffer layer of CdTe on GaAs substrates. This is because both of these tellurides are lattice matched each other. Although the PbTe/CdTe heterointerface easily becomes rough due to the Te precipitates on CdTe buffer layer, a Cd-termination prior to the PbTe growth is found to be effective to keep the interface smooth. It is also revealed that a Te-rich condition under high-temperature growth is favorable to obtain high-quality PbTe films.
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