Abstract
DC and AC parallel heating procedure was applied for quantitative study of in-phase step wandering instability on a Si (111) 1×1 vicinal surface induced by electromigration of Si adatoms. In-phase step wandering is one of the step instability where steps wander in-phase without changing step-step distance.By controlling dc component of heating current (or applied field) and temperature individually, dc current (or dc field) and temperature dependences of the period of the in-phase step wandering on the Si (111) 1×1 vicinal surface were investigated. Temperature dependence of an effective charge of Si adatoms on a Si (111) -1×1 surface was evaluated and at about 1270 K the effective charge is approximately 0.02 and it linearly decreases with temperature.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
