Abstract
In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from <TEX>$73 {\~}138V$</TEX> while surface doping depth varied from <TEX>$0.5{\~}2.0{\mu}m$</TEX>. And on-resistance is decreased from <TEX>$0.18{\~}0.143{\Omega}/cm^2$</TEX> while surface doping depth increased from <TEX>$0.5 {\~}2.0{\mu}m$</TEX>. Maximum breakdown voltage of the proposed structure is 138 V at <TEX>$1.5{\mu}m$</TEX> depth of surface doping, yielding <TEX>$22.1\%$</TEX> of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about <TEX>$21.7\%$</TEX>.
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