Abstract
Quantitative analysis of boron, phosphorus and arsenic in silicon and phosphorus in silicon dioxide has been made by Auger electron spectroscopy with the in situ ion milling technique. Ion-implanted species in polycrystalline silicon and silicon dioxide were used as standard samples. The experimental results indicate that the semi-empirical formalism for quantitative Auger analysis is valid for impurity concentration less than a few percent. Excellent linear relationship has been obtained between the implanted dose and the normalized Auger signal intensity within ±10% for boron and phosphorus and ±20% for arsenic. We also show matrix effects in quantitative analysis of phosphorus in silicon dioxide.
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