Abstract
Quantitative analysis of boron and arsenic in silicon has been made by Auger electron spectroscopy with the in-situ ion milling technique. Ion-implanted boron and arsenic in polycrystalline silicon was used as standard samples. The experimental results indicate that the semi-empirical formalism for quantitative Auger analysis is valid for impurity concentrations less than a few percent. Excellent linear relationship has been obtained between the implanted dose and the normalized Auger signal intensity within ±10% for boron and ±20% for arsenic in silicon.
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