Abstract
The Hall factor in a quantum well structure with X or L-type indirect conduction valleys is calculated for various strain conditions. The two-dimensional constant energy surfaces of occupied valleys are proven to be identical. As a result, the Hall factor depends on the relative direction of occupied valleys to the growth direction, regardless of the number of occupied valleys. This work is widely applicable to the two-dimensional structure with indirect conduction minima for any growth direction and under different strain conditions.
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