Effects of strain and growth direction on the hall factor in n-type semiconductors

Abstract

For n-type semiconductors, we have separated the r m depending on the anisotropy of occupied valleys from the Hall factor and analyzed it for growth with various orientations and under different strain conditions. In order to calculate the r m for the arbitrary growth direction, the expressions of η ii s , η jj s , and η ii s η jj s - η ij s η ji s for both the direct and indirect conduction valleys are obtained as functions of the transverse and longitudinal masses for an ellipsoid. In particular, the r m ’s for the [0 0 1], [1 1 0], and [1 1 1] growth directions are formulated by using the ratio of the longitudinal mass to the transverse mass for occupied valleys.