Abstract

The work considers "transverse" and "longitudinal" photoconductivity modes, regarding the direction of radiation, photoconductivity in semiconductor detectors of CdZnTe. Mathematical calculations were made from the representation of the internal area of the detector in the form of radiation absorption sites. The results of the calculations are compared with experimentally measured photocurrent of the detector with a cross section of 2x2 mm CdZnTe from the direction of its radiation by X-ray. From the ratio of photocurrents in the range of X-ray radiation energies 35-72 keV for these two cases, a linear coefficient of X-ray absorption by the CdZnTe detector is determined.

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