Abstract
We consider physical processes that are fundamental for the creation of memristors. These processes include reduction/oxidation reactions, phase-changing, spintronic and ferroelectric phenomena. A comparative analysis of the characteristics and properties of different memristors is presented. The properties under comparison include scalability, reliability, performance, as well as linearity, symmetry and level-sensitivity, which are important in neuromorphic computing. In terms of a number of properties, the mechanism of resistive switching reduction/oxidation is defined as promising for memristors used in von Neumann architecture and in neuromorphic computing systems.
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