Abstract
The effects of translational kinetic energy of incident O{sub 2} molecules for initial Si(001) oxidation at room temperature have been investigated by using a supersonic molecular beam technique and photoemission spectroscopy. The oxygen saturation coverage on Si (001) surface increased with increasing the translational kinetic energy of O{sub 2}. Two threshold energies, corresponding to the Si dimer backbond oxidation and the second layer (sub-surface) Si atoms backbond oxidation were observed at 1.0 eV and 2.6 eV, respectively. We clarified the relationship between the Si oxidation structure (Si{sup x+}; x =1,2,3,4) in Si-2p photoemission spectra and the translational kinetic energy of O{sub 2} in the initial Si(001) oxidation. (author)
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