Abstract
Low temperature N₂/NH₃/SiH₄ plasma is used to deposit hydrogenated silicon nitride(SiN<SUB>x</SUB>:H). In this process, the main factor influencing the quality of the deposited film is the active species, such as SiH<SUB>x</SUB> and NH<SUB>x</SUB> radicals. In the conventional methods, it was insufficient to explain the correlation between generation of active species and the process parameters. So, a fluid model of 2D axis-symmetry based on dual antenna inductively coupled plasma (ICP) source using N₂/NH₃/SiH₄ gas mixture has been developed for SiN<SUB>x</SUB>:H film deposition. The gas mixture model was comprised of 57 species, 195 chemical reactions and 16 surface reactions. The ratio of input power between independent antenna system affects the electron and SiH<SUB>x</SUB>, NH<SUB>x</SUB> radical generation. And it was observed that the spatial uniformity of electron and radical density increases when the independent input power of dual antenna system is set to 500:500W.
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