Abstract
Wide-Band-Gap (WBG) switching semiconductor has been improved for higher efficiency and higher power density. Especially, SiC FET is the most attractive switching semiconductor for mid-voltage and high power applications, such as, railway transportation. Its desired features for high power converter are low on-state resistance, thermal stability, no reverse recovery, high switching speed, and so on. However, faster switching speed derives higher dv/dt of drain-source voltage, then this result in larger voltage ringing and worse switching noise. In this paper, parallel configuration of SiC FET and Si FET is proposed to suppress voltage ringing and minimize switching noise. Based on the characteristics of output capacitances of both SiC and Si FETs, the switching performances of single SiC FET and parallel connection of SiC/Si FETs are compared of voltage ringing and switching noise in LLC resonant converter for 10kW battery charging module of railway transportation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The transactions of The Korean Institute of Electrical Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
