Abstract
By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence lifetime.
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