Abstract
Energy spectrum of gas particles in plasma is broad, ranging from fractions to 10s of electron volts. Proportion of particles with required energetic parameters, participating in cubic carbon c-C synthesis, is small. External energy deposition can transfer an inert carbon atom to active state and change its electronic configuration. Binding energy of c-C atom depends on energy sources interaction. In this work, the calculations found the binding energy value that was compared with value of energy of the bond between the carbon atoms in ethane. The advisability of external source, activated carbon atoms generator, is marked. It has been established that by adding accelerated carbon atoms with energy of 9,687 eV into reactor it is possible to increase productivity of films, coatings and bulk crystals growth.
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