Abstract
This paper presents the results of studying the composition, structure, and properties of amorphous SiO x film obtained by electron beam evaporation. This film was implanted by Zn ions with energy of 40 keV and a dose of 3×10 16 /cm 2 . Then, annealing was carried out in air at temperatures from 400 to 800°C with a step of 100°C for 1 hour at each stage. It has been found that, after implantation, metal Zn nanoclusters with a size of about 10 nm are formed on the surface and in the near-surface layer of silicon oxide. During annealing, the implanted layer becomes clear, since metallic Zn gradually oxidizes to transparent phases of its oxide ZnO and silicide Zn 2 SiO 4 . After annealing at 700°C, ZnO nanoclusters and surface craters were revealed on the surface and in the subsurface layer of the SiO 2 film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
