Моделирование областей разупорядочения в процессе радиационного дефектообразования

Abstract

This article discusses the model of regions of disordering that are formed as a result of the separation of Frenkel pairs, taking into account the neutral and charged state of the pair. The probability of separation depends on the temperature and the position of the Fermi level in the band gap, therefore, the concentration of primary radiation defects also depends on the temperature and concentrations of donors, acceptors. The depth distribution profiles of primary radiation defects created by low-energy protons in silicon and the dependence of the parameters of the disordering regions on the proton energy are calculated. It is shown that the maximum of the distribution of the disordering regions created by protons is always spatially separated from the maxima of the interstitial silicon distribution, vacancies and divacancies, which allows changing the surface and volume properties of semiconductor structures in various ways. The results obtained are used to predict the characteristics of semiconductor devices operating under conditions of radiation exposure.