Исследование чувствительности пористых толстопленочных элементов на основе SnO2 к концентрации водорода в воздухе

Abstract

The semiconductor gas sensors with low power consumption have high sensitivity and fast response and their manufacturing technologies permit to reduce the dimensions of the transducer. In production of the semiconductor gas sensors the formation of metal-oxide sensitive layer is an important issue, in particular, the process of combination of the high-porous metal-oxide layer and integrated structures. In the paper, the results of the study on experimental transducers of the composition of gas with porous gas-sensitive layer have been presented. The gas-sensitive layer has been formed by the method of suspension inkjet printing of SnO based suspension with further annealing. The comparison of the sensitivity of the experimental samples of the gas composition transducers with the gas-sensitive layers, formed from two variants of initial suspension: based on pure SnO and SnO doped with Cr and Nb, has been performed. The dependence of variation of conductivity of the gas composition of the integrated transducer specimen on the H concentration in the air has been obtained. It has been found that the gas-sensitive layer based on SnO with Cr and Nb additives has higher sensitivity to changes in the detected gas concentration due to higher effective surface area and suppressed grains agglomeration.