Abstract
AbstractThe variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H_2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.
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