Терагерцовые инжекционные лазеры на основе твердого раствора PbSnSe с длиной волны излучения до 50 мкм и их использование для магнитоспектроскопии полупроводников

Abstract

AbstractOn the basis of a Pb_1 –_ x Sn_ x Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb_1 –_ x Sn_ x Se single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-growth technique). By the example of a HgCdTe narrow-gap semiconductor and a quantum-well heterostructure, the possibility of applying the developed lasers in solid-state spectroscopy is demonstrated.