Abstract

On the basis of a Pb1 –xSnxSe solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb1 –xSnxSe single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-growth technique). By the example of a HgCdTe narrow-gap semiconductor and a quantum-well heterostructure, the possibility of applying the developed lasers in solid-state spectroscopy is demonstrated.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call