Abstract
Abstract InGaN/GaN-based LED heterostructures with different numbers of quantum wells are investigated by photocurrent spectroscopy in the wavelength range of 350–500 nm. As a result of the analysis of a series of spectra obtained at various p – n -junction biases, the effect of changing photocurrent direction when varying the excitation wavelength (photoreversible effect) is discovered. The range of p – n -junction biases for which this effect is observed in structures with different numbers of quantum wells in the active region is established.
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