"Брэгговская" решетка заселенности электронов, наводимая в гетероструктуре Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As-GaAs-Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As ее собственным стимулированным пикосекундным излучением

Abstract

It was shown that the modulation of the spectrum of stimulated picosecond emission generated in the AlxGa1-xAs–GaAs–AlxGa1-xAs waveguide heterostructure upon optical pumping of GaAs, and a number of previous experimental results become explainable under the assumption that emission forms a symmetric modification of the “Bragg” population lattice of nonequilibrium electrons GaAs. Boundary conditions defining the lattice design are proposed. In particular, in order to satisfy them, the lattice can only change discretely. The latter is consistent with a change in the modulation of the light absorption spectrum in GaAs, which reflects the modulation of population depletion created by emission in a high-quality heterostructure. The latter is consistent with a change in the modulation of the light absorption spectrum in GaAs, which reflects the modulation of population depletion created by emission. Inducing the lattice, i.e. burning out spatial holes, is one of the reasons for the multimode nature of emission, competition and switching of its modes, modulation of the gain spectrum (burning out frequency holes). The same is possible in a semiconductor laser, as in a waveguide.