Abstract
The article presents the results of a study of the temperature effect on the characteristics of low-barrier ZB-28 diodes with a cutoff frequency over 100 GHz and diode detectors of microwave signal power based on them. A method is proposed to compensate the temperature instability of detectors, implemented by including an additional reference diode in the diode detector circuit. The main results presented of experimental studies for the developed detector with passive temperature compensation are presented.
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