Abstract
Modern medical microwave diagnostic equipment requires the use of solutions related to the compactness of the developed devices and high performance. It is possible to achieve the set conditions with the use of a modern semiconductor component base based on A3B5 compounds. The paper presents the designs of the main control elements of the microwave signal as part of the microwave radiothermometer monolithic Al-GaN/GaN/SiC HEMT SPDT transistor switch and MIC LNA developed on the basis of the pHEMT heterostructure of gallium arsenide.
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