Abstract
As a solution to the limitations of semiconductor miniaturization and multilayer technology, Atomic Layer Deposition(ALD) and Atomic Layer Etching(ALE) technologies are attracting attentions. For ALD and ALE process technologies, temperature uniformity is an important factor in determining the film quality of thin films and aspect ratio. Conventionally, an indirect heating method by a buried heater that heats the substrate is used, but the method has a decrease in productivity due to the preheating process. This study introduce a direct wafer heating method using GHz band microwaves to suggest the direction for new heater equipment to solve the problems of the existing method. At atmospheric pressure, the 2.45 GHz microwave is radiated through a double-slot antenna to heat a 12inch silicon wafer. The microwave propagates through the waveguide in TE10 mode and heats the wafer by cavity heating. It was confirmed through simulations and experiments that the wafer can be heated quickly using microwaves and the temperature distribution can be made uniform by the cavity conversion.
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