Abstract
A quantitative model of the dimensional effect — dependence of surface states on the gate size in MOS-structures subjected to ionizing irradiation has been developed. It is assumed that the dimensional effect is due to the exodus of hydrogen released from hydrogen-containing hole traps through the butt- ends of a two-dimensional MOS-structure. The effect is described by a system of diffusion-kinetic equations solved together with the Poisson equation. The influence of technological treatments and regimes of thermal oxidation on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is the accelerated by ionizing irradiation out-diffusion of neutral hydrogen atoms.
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