Abstract
Spectroscopic ellipsometry (SE) method has been used to investigate the optical properties of nanostructured PbSe thin films obtained by chemıcal bath deposıtıon (CBD) method. For a better resolution of the structure of interband transitions and for determination of critical points, the function obtained by numerical differentiation of the experimental data of the dielectric function is used. The theoretical fitting was carried out using the "Graphical Analysis" program. The best fit ıs obtained with a 2D-critical point line shape (m = 0) for E=2÷3 eV energy region. One critical point corresponding to Eg = 2,5 eV have been determined. This value is attributed to the L4L6 transition of the Brillouin zone.
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