Abstract
The nonlinear model of a field-effect transistor based on the mathematical apparatus of the theory of artificial neural networks was developed. The main feature of this model is the possibility of training neural networks used to approximate the current-voltage characteristic and the gate-drain and gate-source capacitances of a nonlinear transistor model by using optimization algorithms built into popular microwave CAD systems. This makes it possible to use the well-known advantages of neural networks in the problems of function approximation to increase the reliability of the results of non-linear modeling of microwave devices based on field-effect transistors.
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