Abstract
The tin dioxide (SnO2) films doped with bismuth by means of magnetron sputtering of semiconductor two-phase target and powder BiO2 as source of Bi were produced. The effect of bismuth dope concentration variation on the microstructure, electrophysical and gas-sensing properties was investigated. It has been found, that films consist of crystalline rods with diameter of 21±2 nm and length of 120±10 nm. Bismuth doping provided decrease in signal timing drift of acetone sensor in analyzed probe. Sensitivity to acetone vapor of the sample derived from targets with 0.01% bismuth oxide concentration increase almost by 10 times (up to 850) in comparison with undoped film at 300°С. Based on the obtained experimental data the mechanism of bismuth dope influence on electrical and gas-sensing properties of produced tin dioxide films was evaluated. Obtained results have shown capability the use of bismuth doped dioxide tin films for development of saturated acetone vapor sensors.
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