Abstract
Формирование слоев наноструктурированного пористого кремния при облучении малыми дозами γ-радиации
Highlights
We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production
There has been an increase in interest in porous silicon (SiNP) nanowires which are obtained by the method of metal-stimulated chemical etching (EE method) [1–3]
This is due to the use of nanostructured porous silicon in modern electronics, optoelectronics, biomedicine as the materials for creating active substrates for giant Raman spectroscopy (SERS) [4–7], as well as for elaborating multifunctional resistive and capacitive devices [8, 9]
Summary
We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production (in situ). Olga Ya. Belobrovaya, https://orcid.org/0000-0002-9160-8702, Saratov State University, 83 Astrakhanskaya St., Saratov 410012, Russia, lab32@mail.ru Https://orcid.org/0000-0002-0980-7826, Saratov State University, 83 Astrakhanskaya St., Saratov 410012, Russia, gwiktor@mail.ru
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