Abstract
Phenomenological mechanisms of an increase in unipolarity degree at thermal treatment under short circuit conditions of strongly doped crystals are researched by comparison with thermal behavior of nominally pure LiNbO3 crystals of congruent composition. It has been shown that an increase in unipolarity degree, and correspondingly vanishing of domain structure in strongly doped LiNbO3:ZnО crystals starts by thermal decomposition of charged polar clusters. These clusters stabilize domain walls. The decomposition is accompanied by sharp jump-like injection of additional charge carriers (Li+ cations). Due to this, conductivity of LiNbO3:ZnО crystals is one order of magnitude higher at temperature above 800K than in nominally pure LiNbO3 crystals of congruent composition. The injection leads to decomposition of domain structure in LiNbO3:ZnО crystals in spite of LiNbO3 crystals of congruent composition.
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