Abstract
The possibility of creating defects with spin-dependent fluorescence in a Van der Waals material, hexagonal boron nitride (hBN), by irradiating the latter with high-energy protons (EP = 15 MeV) has been studied. Using micro-photoluminescence and electron paramagnetic resonance methods it was shown that such irradiation leads to the creation of boron vacancies in the negative charge state (V-B^- -centers). The ground spin triplet (S = 1) state of these defects demonstrates an optically induced inverse population.
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