Abstract

The possibility of creating defects with spin-dependent fluorescence in a Van der Waals material, hexagonal boron nitride (hBN), by irradiating the latter with high-energy protons (EP=15 MeV) has been studied. Using micro-photoluminescence and electron paramagnetic resonance methods it was shown that such irradiation leads to the creation of boron vacancies in the negative charge state (V-B-centers). The ground spin triplet (S=1) state of these defects demonstrates an optically induced inverse population. Keywords: electron paramagnetic resonance, micro-photoluminescence, hexagonal boron nitride, boron vacancy.

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