Abstract
In this study, we present an innovative method for enhancing the performance of organic electrolyte-gated transistors (OEGTs) through the integration of nanostructures into their active layers. These nanostructures increase the surface area at the interface between the electrolyte and semiconductor, effectively boosting charge transport characteristics. Such structural enhancements also contribute to significant improvements in achieving high bias stability. The OEGT, characterized by high carrier mobility and low-voltage operation, opens up a new pathway for attaining high performance and low power consumption in flexible and wearable electronics. This research marks a significant step forward in the design and manufacturing of organic electronics, promising to substantially elevate the performance of future electronic devices.
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