Abstract
The article is devoted to the design of RAM blocks as part of microprocessor systems and methods for ensuring fault tolerance. The structural scheme of RAM and the process of influence of heavy charged particles on the integrated circuit (IC) of memory are considered. Special attention is paid to the influence of the biopolar effect on the fault stability of the IC elements, as well as to the emerging multibit events. The article analyzes the various phases of RAM operation and the reactions of memory circuit elements to the occurrence of failures caused by the hit of HCP.
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